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 TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
FEATURES
TSMF1000 TSMF1020
* Package type: surface mount * Package form: GW, RGW, yoke, axial * Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 * Peak wavelength: p = 890 nm * High radiant power * Angle of half intensity: = 17 * Low forward voltage * Suitable for high pulse current operation * Versatile terminal configurations
16758-5
TSMF1030
* Package matches with detector TEMD1000 * Floor life: 168 h, MSL 3, acc. J-STD-020 * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
TSMF1000 series are infrared, 890 nm emitting diodes in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
* IrDA compatible data transmission * Miniature light barrier * Photointerrupters * Optical switch * Control and drive circuits * Shaft encoders
PRODUCT SUMMARY
COMPONENT TSMF1000 TSMF1020 TSMF1030 Ie (mW/sr) 5 5 5 (deg) 17 17 17 P (nm) 890 890 890 tr (ns) 30 30 30
Note Test conditions see table "Basic Characteristics"
ORDERING INFORMATION
ORDERING CODE TSMF1000 TSMF1020 TSMF1030 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing Yoke
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 s tp = 100 s TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 0.8 180 UNIT V mA mA A mW
www.vishay.com 224
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061 Rev. 1.7, 04-Sep-08
TSMF1000, TSMF1020, TSMF1030
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Soldered on PCB, pad dimensions: 4 mm x 4 mm TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 400 UNIT C C C C K/W
200 180
120 100 80 60 RthJA = 400 K/W 40 20 0
0 10 20 30 40 50 60 70 80 90 100
21166
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 RthJA = 400 K/W
IF - Forward Current (mA)
160
0
10
20 30 40
50 60 70 80
90 100
21165
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of p Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 C, unless otherwise specified IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 20 mA IF = 1 A, tp = 100 s IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA IF = 100 mA, tp = 100 s IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tf fc d 2.5 160 5 25 35 - 0.6 17 890 40 0.2 30 30 12 1.2 13 MIN. TYP. 1.3 2.4 - 1.8 10 MAX. 1.5 UNIT V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm
Document Number: 81061 Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 225
TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 000 tp/T = 0.005 Tamb < 60 C
1000
I F - Forward Current (mA)
1000 0.02 0.05 100 0.2 0.5 DC 10 0.1
e - Radiant Power (mW)
100
0.01
100
10
1
1 0.01
95 9985
0.1
1
10
0.1 10 0
94 8007
t p - Pulse Length (ms)
10 1 10 2 10 3 I F - Forward Current (mA)
10 4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
104
IF - Forward Current (mA)
1.6
103
Ie rel; e rel
1.2 IF = 20 mA 0.8
102
101
0.4
100 0
94 8880
1
2
3
4
0 - 10 0 10
94 7993
50
100
140
VF - Forward Voltage (V)
T amb - Ambient Temperature (C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
1000
1.25
Ie - Radiant Intensity (mW/sr)
e rel - Relative Radiant Power
1.0
100
0.75
10
0.5
1
0.25
0.1 100
16189
101
102
103
104
20082
0 800
900
1000
IF - Forward Current (mA)
- Wavelength (nm)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
www.vishay.com 226
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061 Rev. 1.7, 04-Sep-08
TSMF1000, TSMF1020, TSMF1030
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero
REFLOW SOLDER PROFILE
0 10 20 30 - Angular Displacement
260 240
Srel - Relative Sensitivity
220
Temperature (C)
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0
200 180 160 140 120 100 80 60 0
+ 5 C/s
- 5 C/s
60 s to 120 s 5s
20 40 60 80 100 120 140 160 180 200 220
94 8248
17172
Time (s)
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile
PRECAUTIONS FOR USE
1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 C to 35 C, R.H. 60 %. 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 C to 35 C, R.H. 60 %, devices should be treated at 60 C 5 C for 15 h. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3.
Document Number: 81061 Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 227
TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters: TSMF1000
16159
PACKAGE DIMENSIONS in millimeters: TSMF1020
3.8 0.2
O 1.9 0.2
0.85
0.15 0.05
0.3
2.5 0.2 2 0.2 1 0.1 1.1 0.5 0.4 4.5 0.1 2.3 0.1
0.75
1.4
2.7 0.2
C
A
16160
www.vishay.com 228
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061 Rev. 1.7, 04-Sep-08
TSMF1000, TSMF1020, TSMF1030
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters: TSMF1030
16228
REEL DIMENSIONS in millimeters
0.5
16 0.2
Unreel direction X
.5
60.2
2. 5
0
178 1
Tape position coming out from reel
0.
5
13.2
1.5
13
X Label posted here
Leader and trailer tape: Parts mounted Empty leader (400 mm, min.)
Direction of pulling out Empty trailer (200 mm, min.)
Drawing-No.: 9.800-5080.01-4 Issue: 3; 11.06.08
18033
Document Number: 81061 Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 229
TSMF1000, TSMF1020, TSMF1030
Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS
Compliant, 890 nm, GaAlAs Double Hetero
TAPING DIMENSIONS in millimeters: TSMF1000
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05 12 0.3 2 0.05
Top tape
Anode Push pin through hole
Feed direction
4 0.1
Quantity per reel: 1000 pcs or 5000 pcs
18030
TAPING DIMENSIONS in millimeters: TSMF1020
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05
Feed direction
2 0.05
4 0.1
Top tape
Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs
18031
12 0.3
www.vishay.com 230
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81061 Rev. 1.7, 04-Sep-08
TSMF1000, TSMF1020, TSMF1030
High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero
TAPING DIMENSIONS in millimeters: TSMF1030
3.05 0.1 0.3
O 1.55 0.05
4 0.1 1.75 0.1 5.5 0.05
Feed direction
2 0.05
4 0.1
18032
Top tape
Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs
12 0.3
Document Number: 81061 Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 231
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1


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